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Главная Журналы Complementary - Symmetry MOS Integrated Circuits. International Solid-State Circuit Conference. Digest of Technical Papers, 1969; p. 154-155 with ill. 351. Burns J. R. Switching Response of Complementary - Symmetry MOS-Transistor Logic Circuits. RCA Rev., 1964, 25, December, p. 627-661 with ill. 352. Lohman R. D. Some Applications of Metal - Oxide-Semiconductors to Switching Circuits. Semiconductor Products and Solid-State Technology, 1964. 7, May, p. 31-34 with ill. 353. Ahrons R. W., Mitchell M. M. MOS Micropower Complementary Transistor Logic. International Solid-State Circuit Conference. Digest of Technical Papers, 1965, p. 80-81. 354. Wood J., R. G. Ball. The Use of Insulated-Gate Field-Effect Transistors in Digital Storage Systems. ISSCC, Digest of Technical Papers, 1965, p. 82-83. 355. Complementary - MOS Integrated Binary counter. ISSCC, Digest of Technical Papers, 1967, 52-53. Auth: A. K. Rapp, L. Wennick, H. Borkan. K. R. Keller. 356. Karp J., de Atley E. Using Four-Phase I. C. Logic. Electronic Design, 1967. 15, April, p. 62-66 with ill. 357. Watkins B. G. A Low-Power Multiphase Circuit Technique. IEEE J. of Solid-state Circuits, 1967, SC-2, December, p. 213-220 with ill. 358. Yen Y. T. Transient Analysis of Four-Phase. MOS Switching Circuits. IEEE J. of Solid-state Circuits, 1968, SC-3, March, p. 1-5 with ill. 359. Yen Y. T. A Mathematical Model Characterizing Four-Phase MOS Circuits. IEEE Trans, on Computers, 1968, C-17, September, p. 822-826 with 360. Beer A. P., Nicholas K. H., Lewin I. H. An MOST Memory Using Discretionary Wiring. ISSCC, Digest of Technical Papers, 1969, p. 142- 143. 361. Hodges D. A. Large Capacity Semiconductor Memory. Proc. IEEE, 1968, 56, July, p. 1148-1162 with ill. 362. Pleshko P., Terman L. M. An Investigation of the Potential of MOS-Transistor Memories. IEEE Trans, on Electronic Computers, 1966, EC-15, August, p. 423-427 with ill. 363. Priedrich J. H. A Coincident-Select MOS Storage Array. IEEE J. of Solid-state Circuits, 1968, SC-3, September, p. 280-285 with ill. 364. Boysel L. Memory on a Chip: a Step toward Large-Scale Integration. Electronics, 1967, 39, February, p. 93-97 with ill. 365. Integrated Memory using Complementary Field-Effect Transistors. ISSCC,. Digest of Technical Papers, 1966, p. 118-119. Auth: J. R. Burns, J. J. Gibson, A. Harei, K. C. Ku, R. A. Powlus. 366. Allison J. P., Heiman F. P., Burns J. R. Silicon-on-Sapphire Complementary MOS Memory Cells. IEEE J. of Solid-State Circuits, 1967, SC-2, December, p. 208-212 with ill. 367. Yamamoto H., Shiraishi M., Kurosawa T. A 40-nS n-Channel MOS- 1С Memory. ISSCC, Digest of Technical Papers, 1969, p. 40-41. 368. Igarashi R., Kurosawa Т., Yaita T. A 150 Nanosecond Associative Memory using Integrated MOS-Transistors. ISSCC, Digest of Technical Papers, 1966, p. 104-105. 369. Herlein R. P., Thompson A. V. An Integrated Associative Memory Element. International Solid-State Circuit Conference, Digest of Technical Papers, 1969, p. 42-43. 370. The Variable-Threshold Transistor, a New Electrically-Alterable, Nondestructive READ - Only Storage Device. IEEE Trans. Electron Devices, 1968, ED-15, June, p. 420-421 with ill. Auth.: H. A. R. Wegener, A. J. Lincon, H. C. Pao, M. R. OConnel, R. E Oleksiak. 371. Wallmark J. Т., J. H. Scott. Switching and Storage Characteristics of MIS Memory Transistors. RCA Rev., 1969, 30, June, p. 335-365 with ill. 372. Plad P. W., Varker C. J., Lin H. C. The Application of MNOS-Tran-sistors in a Preset Counter with Nonvolatile Memory. International Solid-State Circuit Conference, Digest of Technical Papers, 1969, p. 46-47. 373. Fattal L. Field-Effect Transistors as Choppers. Semicond. Prod. Solid-State Technology, 1964, 7, April, p. 13-18 with ill. 374. Shipley M. Analog Switching Circuits Use Field-Effect Devices. Electronics, 1964, 37, December, p. 45-51 with ill. 375. Ruegg H. W. An Integrated FET Analog Switch. Proc. IEEE, 1964, 52. December, p. 1572-1575 with ill. 376. Bowers J. O., Eden W. L. The Application of Junction type Field-Effect Transistors to High-Level Time Division Multiplexing. Proc. National Telemetering Conference, Houston, Texas, 1965, April, p. 102-110 with ill. 377. Toney P. A. Design Considerations for Differentiat Low-Level Junction FET Commutators. IEEE Trans, on Aerospace and Electronic Systems, 1967, AES-3, November, p. 871-879 with ill. 378. Shipley M. FET Low-Level Choppers. Electronic Equipment Engineering, 1964, 12, February, p. 62-65 with ill. 379. Barton R. The Field-Effect Transistor Used as Low-Level Chopper. Electronic Engineering, 1965, 37, February, p. 80-93 with ill. 380. Hunter G. N. A MOST Gate for Pre-Sense Amplifier Strobing. Electronic Engineering, 1966, 38, July, p. 432-435 with ill. 381. Martin T. B. Circuit Applications of the Field-Effect Transistor. Semiconductor Products, 1962, 5, March, p. 30-38 with lil. 382. Gosling W. Voltage Controlled Attenuators using Field-Effect Transistors. IEEE Trans, on Audio, 1965, AV-13, September/October, p. 112-120 with ill. 383. Ow H. P. von. Reducing Distortion in Controlled Attenuators Using FET. Proc. IEEE, 1968, 56, October, p. 1718-1719 with ill. 384. Loe J. M. FETs call the Tune in Active Filter Design. Electronics, 1966, 39, October, p. 98-101 with ill. 385. Higleyman W. H., Jacob E. S. An Analog Multiplier Using Two Field Effect Transistors. IRE Trans, on Communications Systems, 1962, CS-10, September, p. 311-317 with ill. 386. Osterfjells S. Analog Multiplier with Field-Effect Transistors. Proc. lEEE, 1965, 53, May, p. 521 with ill. 387. Hutcheson I. C, Puddlefoot D. J. New Solid-State Electronic Multiplier-Divider. Proc. lEE, 1965, 112, August, p. 1523-1531 with ill. 388. Radeka V. Fast Analogue Multipliers with Field-Effect Transistors. IEEE Trans. Nuclear Science, 1964, NS-U, January, p. 302-307 with ill. 389. Shore B. Pocket-Size Analog Computer Dividers and Multipliers. Electronics, 1967, 40, December, p. 66-67 with ill. 390. Panico J. J. FET Stabilizes Amplitudes of Wien Bridge Oscillator. Electronics, 1966, 39, October, p. 107 with il . 391. Howard W. G., Stellrecht H. H. Integrated Voltage-Controlled Oscillators Using Distributed parameter Phaseshift Networks. International Solid-State Circuit Conference, Digest of Technical Papers, 1969, p. 102-103 with ill. 392. Neu F. D. Voltage Controls Solid-State Nonlinear Resistance. Electronics, 1964, 37, February, p. 36-38 with ill. 393. Bilotti A. Operation of a MOS-Transistor as Variable Resistor. Proc. IEEE, 1966, 54, August, p. 1093-1094 with ill. 394. McCaslin J. B. Electrometer for Ionization Chamber Using Metal - Oxide-Semiconductor Field-Effect Transistors. Rev. Scientific Instruments, 1964, 35, November, p. 1587-1591 with ill. 395. Negro V. C, Cassidy M. E., Graveson R. T. A Guarded Insulated-Gate Field-Effect Electrometer. IEEE Trans. Nuclear Science, 1967, NS-I4, February, p. 135-142 with ill. 396. Pollack S. R. Schottky Field Emission Tlirough Insulating Layers. J. Appl. Phys., 1963, 34, April, p. 877-880 with ill. 397. Klein N., Gafni H. The Maximum Dielectric Strength of Thin Silicon Oxide Films. IEEE Trans. Electron Devices, 1966, ED-13, February, p. 28.1- 289 with ill. 398. Kennedy E. J. Gate Leakage Currents in MOS Field-Effect Тгапч1ч tors. Proc. IEEE, 1966, 54, August, p. 1098-1099 with ill. 399. Negro V. C. Zero Gate Leakage Current in Enhancement Mode MOS FET. Proc. IEEE, 1968, 56, February, p. 202 with ill. 400. Hojberg K. S. A Transistorized Electrometer - Amplifier Electronic Engineering, 1965, 37, November, p. 758-759 with ill. 401. De Coulon F. Thermal-Drift Compensation of an Electrometer Using MOS Field-Effect Transistors. Electronics Letters. 1966, 2, July, p. 255-256 with ill. 402. Kennedy E. J., Pierce J. F. A Sensitivity Comparison of Three Transistorized DC Current-Feedback Electrometers. IEEE Trans. Nuclear Science 1968, NS-15, February, p. 337-348 with ill. 403. Radeka V. The Field-Effect Transistors in a Charge-Sensitive Amplifier. Harwell Atomic Energy Research Establishment Report, AERE - R 4379 1963, July. 404. Blalock T. V., Pierce J. F. Applications of Field-Effect Transistors in Low-Noise Wideband Voltage and Charge Sensitive Preamplifiers. Proc. National Electronics Conference, 1963, 19, p. 407-420 with ill. 405. Blalock T. V. A Low-Noise Charge Sensitive Preamplifier with a Field-Effect Transistor in the Input Stage. IEEE Trans. Nuclear Science, 1964, : NS-11, June, p. 365-372 with ill. 406. Nybakken T. W., Vali V. A Hybrid Preamplifier for Cooled Lithium Ion-Drifted Semiconductor Detectors. Nuclear Instruments and Methods, 1965, 32, January, p. 121-124 with ill. 407. Blalock T. V. Wide-Band Low-Noise Charge Sensitive Preamplifier. IEEE Trans. Nuclear Science, 1966, NS-13, June, 457-467 with ill. 408. Smith K. F., Cline J. E. A Low-Noise Charge Sensitive Preamplifier for Semiconductor Detectors using Paralleled Field-Effect Transistors. IEEE Trans. Nuclear Science, 1966, NS-13, June, 468-476 with ill. 409. Bradley A. E. Design for a Versatile Charge Sensitive Preamplifier for Nuclear Radiation Detectors. IEEE Trans. Nuclear Science, 1966, NS-13, February, p. 611-622 with HI. 410. Radeka V. Field-Effect Transistor Noise as a Function of Temperature and Frequency, p. 393-401.- In: Semiconductor Nuclear Particle Detectors and Circuits. W. L. Vrown (Ed.). Washington, National Academy of Sciences, 1969. 480 p. with ill. 411. Elad E., Nakamura M. Germanium FET - A Low-Noise Active Device. IEEE Trans. Nuclear Science, 1968, NS-15, February, p. 283-290 with ill. 412. Hatch K. Aspects of Resolution Degradation in a Nuclear Pulse Analyzer System. IEEE Trans. Nuclear Science, 1968, NS - 15, February, p. 303-314 with ill. 413. Elad E., Nakamura JW. High Resolution Beta and Gamma - Ray Spectrometer. IEEE Trans. Nuclear Science, 1967, NS-14, February, p. 523- 531 with ill. 414. Elad E., Nakamura JW. Hypercryogenic Detector -FET Unit -Core of High-Resolution Spectrometer. IEEE Trans. Nuclear Science, 1968, NS-15, June, p. 477-485 with ill. 415. Spaulding R. A. Field-Effect Transistor Noise at Low Temperatures. Proc. IEEE, 1968, 56, May, p. 886-887 with ill. 416. Shockley W. The Theory of p - n-Junctions in Semiconductors and p-n-Junction Transistor. Bell Syst. Tech. J., 1949, 28, July, p. 435-489 with ill. 417. The p-Channel Refractory Metal Self-Registered Mos FET. IEEE Trans. Electron Devices, 1971, ED-18, № 10, p. 931-940 with ill. Auth.: D. W. Brown, W. R. Cady, J. W. Sprague, P J. Sa vagni. 418. Self-Registered Molybdenum-Gate MOS FET. J. of Electrochemical Soc, 1968, 115, № 8, p. 874-876 with ill. Auth.: D. W. Brown, W. E. Engeler, E. Garfinkel, P. V. Gray. 419. Карбид кремния. Под ред. Г. Хениша, Р. Роя. М., «Мир», 1972. 386 с с ил. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 [ 98 ] 99 |