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Главная Журналы 280. Van der Ziel A., Его J. W. Small-Signal, High-Frequency Theory of Field-Effect Transistors. IEEE Trans. Electron Devices, 1964, ED-11, April, p. 128-135 with 111. 281. Flinn I., Bew G., Berz F. Low-Frequency Noise in MOS Field-Effect Transistors. Solid-State Electronics, 1967, 10, August, p. 833-845 with ill. 282. Halladay H. £., Van der Ziel A. Field-Dependent Mobility Effects in the Excess Noise of Junction-Gate Field-Effect Transistors. IEEE Trans. Electron Devices, 1967, ED-14, February, p. 110-111. 283. Blair L. H., Adler R. B. Gate Noise in Silicon Field-Effect Transistors. Digest of Technical Papers, International Solid-State Circuit Conference, Philadelphia, 1964, p. 44-45. 284.* Johnson H. Noise in Field-Effect Transistors. Ch. 6.-In: Field-Effect Transistors Eds. T. Wallmark, H. Johnson. New Jersey, Prentice-Hall, Englewood Cliffs, 1963, p. 371 with ill. 285. Shoji M. Analysis of High-Frequency Therm.al Noise of Enhancement Mode MOS Field-Effect Transistors. IEEE Trans. Electron Devices, 1966, ED-13, June, p. 520-524 with ill. 286. Paul R„ Thermisches Rauschen von MOS-Transistoren. Nachrichten-technik, 1967, 17. December, p. 458-466 with ill. 287. Sah C. Т., Wu S. Y., Hielscher F. H. The Effects of Fixed Bulk charge on the Thermal Noise in Metal - Oxide - Sem.iconductor Transistors. IEEE Trans. Electron Devices, 1966, ED-13, April, p. 410-414 with ill. 288. Klaassen F. M., Prins J. Thermal Noise of MOS-Transistors. Philips Res. Repts., 1967, 22, October, p. 505-514 with ill. 289. Halladay H. £., Van der Ziel A. On the High-Frequency Excess Noise and EquiTalent Circuit Representation of the MOS FET with n-Type Channel. Solid-State Electronics, 1969, 12, March, p. 161-176 with ill. 290. Halladay H. E., Van der Ziel A. Test of the Thermal Noise Hypothesis in MOS FETs. Electronics Letters, 1968, 4, August, p. 366-367 with ill. 291. Sah C. T. Theory and Experiments on the 1/f Surface Noise of MOS Insulated-Gate Field-Effect Transistors. IEEE Trans. Electron Devices, 1964, ED-11, Novem.ber, p. 534 withi ill. 292. Wu S. Theory of the Generation-Recombination Noise in MOS-Transistors. Solid-state Electronics, 1968, 11, January, p. 25-32 with ill. 293. Yau L. D., Sah C. T. Theory and Experiments of Low-Frequency Generation-Recombination Noise in MOS-Transistors. IEEE Trans. Electron Devices, 1969, ED-16, February, p. 170-177 with ill. 294. Christensson S., Lundstrom I., Svensson C. Low-Frequency Noise in MOS-Transistors - 1 Theory. Solid-State Electronics, 1968, 11, September, p. 798-812 with ill. 295. Christensson S., Lundstrom I., Svensson C. Low-Frequency Noise in MOS-Transistors -II Experim.ents. Solid-State Electronics, 1968, 11, September, p. 813-820 with ill. 296. Nicollian E. H., Goetzberger A. MOS-Study of Interface-State Time Constant Dispersion. Appl. Phys. Letters, 1967, 10, January, p. 60-62 with ill. 297. Abowitz G., Arnold £., Leventhal E. Surface States and l/f Noise in MOS-Transistors. IEEE Trans. Electron Devices, 1967, ED-14, November, p. 775-777 with ill. 298. Mavor J. Noise Parameters for Metal - Oxide -Sem.iconductor Transistors. Proc. lEE, 1967, Septem.ber, p. 1463-1467 with ill. 299. Mavor J. Low-Noise Operation of MOS-Transistors in Common-Gate Connection. Electronics Letters, 1967, 3, Teptem.ber, p. 406-407 with ill. 300. Haus H. A., Adler R. B. Circuit Theory of Linear Noisy Networks. New York, Technology Press of M. I. T. and Wiley, 1959, p. 270 with ill. 301. Flinn I., Bew G., Berz F. Low-Frequency Noise in MOS Field-Effect Transistors. Solid-State Electronics, 1967, 10, August, p. 833-845 with ill. 302. Leupp A., Strutt M. J. O. Comparision of Calculated Noise Figures from, the Parameters of a JFET with Measured Total Noise Figures. Solid-State Electronics, 1967, 10, Decem.ber, p. 1221-1222 with ill. 303. Leupp A., Stratt M. J. O. Noise Beliavior of the MOS FET at VHP and UHF. Electronics Letters, 1968, 4, July, p. 313-314 with ill 304. Leupp A., Strutt M. J. O. High-Frequency FET Noise Parameters and Approximation of the Optimum Source Admittance. IEEE Trans. Elect-ren Devcies, 1969, ED-16, May, p. 428-431 with ill. 305. Lane R. Q. The Comparative Perform.ance of FET and Bipolar Transistors at VHF. IEEE J. of Solid-State Circuit, 1966, SC-1, September, p. 35- 39 with ill. 306.* Gosling W. Field Effect Transistor Applications. New York, Wiley, 1964, p. 192 with ill. 307.* Griswold D. IW. Applications of Field-Effect Transistors in Linear Amplifier and Attenuator Circuits. Ch. lO.-In: Field-Effect Transistors, J. T. Wallmark, H. Johnson. (Eds.) New Yersey, Prentice-Hall, Englewood Cliffs, 1966, p. 371 with ill. 308. Angelo E. J. Electronics: BJTs, FETs and Microelectronics. New York, McGraw-Hill, 1969, p. 250 with ill. 309. Todd C. D., Junction Field-Effect Transistors. New York, Wiley, 1968, p. 430 with ill. 310. Millman J., Taub H. Pulse Digital and Switching Wavefdrm.s. New York, McGraw-Hill, 1965, p. 320 with ill. 311. Vadasz L. The Use of MOS-Structure for the Design of High Value Resistors in Monolithic Integrated Circuits. IEEE Trans. Electron Devices, 1966, ED-13, May, p. 459-465 with ill. 312. Crawford B. Compementary Two-Stage Amplifiers. Electro-Technology, 1964, 73, May, p. 48-53 with ill. 313. Hibber D., Leistiko F. A High performance Universal Operational Am.plifier. Digest of Technical Papers, 1963 International Solid-State Circuits Conference, p. 40-41. 314. Richards J. C. S. A D. C. Differential Amplifier using Field-Effect Transistors. Electronic Engineering, 1965, 37, Septem.ber, p. 598-601 with ill. 315. Fray P. W. A MOST Integrated Differential Amplifier IEEE Journal of Solid-State Circuits, 1969, SC-4, June, p. 166-168 with ill. 316. Wilson G. R. A Monolithic Junction FET-NPN Operational Am.plifier. IEEE Journal of Solid-State Circuits, 1968, SC-3, December, p. 341-348 with ill. 317. Lyon K. E. FETs in Communication Circuit Applications. IEEE Trans, on Broadcast and T. V. Receivers, 1965, BTR-11, December, p. 79-83 with ill. 318. Lane R. Q. The Comparative Performance of FET and Bipolar Transistors at VHF. IEEE Journal of Solid-State Circuits, 1966, SC-1, September, p. 35-39 with ill. 319. T. V. Applications of MOS-Transistors. IEEE Trans, of Broadcast and T. V. Receivers, 1966, BTR-12, November, p. 68-76 with ill. Auth.: W. H. Austin, J. A. Dean, D. H. Griswold, O. P. Hart. 320. Klienman H. H. Application of Dual-Gate MOS Field-Effect Transistors on Practical Radio-Receivers. IEEE Trans, of Broadcast and T. V. Receivers, 1967, BTR-13, July, p. 72-81 with ill. 321 Rollet J. M. Stability and Power-Gain Invariants of Linear Twoports. IRE Trans, on Circuit Theory, 1962, CT-9, March, p. 29-32 with ill. 322. Weinert F. K. Scattering Paraineters Speed Design of High-Frequency Transistor Circuits. Electronics, 1966, 39, September, p. 78-88 with ill. 323. Froehner W. H. Quick Am.plifier Design with Scattering Param.eters. Electronics, 1967, 40, October, p. 100-109 with ill. 324. Cardinal R. E. Transistor characterization by Three-Port Scattering Param.eters. Digest of Technical Papers, International Electronics Conference. Torwito, 1967, p. 118-119 with ill. 325. Ku W. H. Unilateral Gain and Stability Criterion of Active Two-Porst in Term.s of Scattering Parameters; Proc. IEEE, 1966, 54, November, p. 1616-1618 with ill 326. Mason S. J. Power Gain in Feedback Amplifiers. IRE Trans, on-Circuit Theory, 1954, CT-1, June, p. 20-25 with ill. 327. Vogel J. S. Nonlinear Distortion and Mixing Processes in Fields Effect Transistors. Proc.IEEE, 1967, 55, Decem.ber, p. 2109-2116 with ill. 328. Kolk P. E., Maloff J. A. The Field-Effect Transistor as High-Frequency Amplifier. Electronics, 1964, 37, December, p. 71-74 with ill. 329. McKeon E. F. Cross-Modulation Effects in Single-Gate and Dual-Gate MOS Field-Effect Transistors. RCA Application Note, 1967. 330. Milligan L. VHF Amplifier Considerations using TISX35 FET. Texas Instruments Application Note, 1966. 331. Pierson O. R. Sm.all-Signal Perform.ance of a UHF Junction-Gate FET. Texas Instruments Application Note, 1967. 332. Von Recklinghausen D. R. Theory and Design of FET Converters. IEEE Trans, on Broadcast arid T. V. Receivers, 1966, BTR-12, April, p. 43-50 with ill. 333. Mitchel M. M. The n-Channel MOS-Devices as an. R. F. Am.plifier. International Solid-State Circuits Conference, Digest of Technical Papers, 1966, p. 108-109, 334. Cranmer W. S. Application of a Dual-Gate MOS Field-Effect Transistor to Linear Colour Demodulation. IEEE Trans, on Broadcast and T. V. Receivers, 1967, BTR-13, November, p.- 72-76 with ill. 335. Burns J. R. High-Frequency Characteristics "of the Insulated-Gate Field-Effect Transistor. RCA Rev,, 1967, 28, September, p. 385-418 with ill. 336. Weaver S. M. For a Good Mixer, Add One FET. Electronics, 1966, 39, March, p. 109-112 with ill. 337. Fitchen Ip. C, Sundberg G. C. Conversion Gain Null in FET Mixers. Proc. IEEE, 1967, 55, January, p. 101-102 with ill. 338. Rafuse R. P. Symmetric MOS FET Mixers of High Dynamic Range. International Solid-State Circuits Conference, Digest of Technical Papers, 1968, p. 122-123. 339. Okamoto M., Van der Ziel A. Noise Figure of FET Mixers with H. F. Feedback from Output to Input. IEEE J. of Solid-State Circuits, 1968, SC-3, Septem.ber, p. 300-302 with ill. 340. Warner R. M. Comparing MOS and Bipolar Integrated Circuits. IEEE Spectrum, 1967, 4, June, p. 50-58 with ill. 341. Farina D. E., Trotter D. MOS Integrated Circuits Save Space and Money. Electronics, 1965, 38, October, p. 84-95 with ill. 342. Roberts D. H. Silicon Device Technology. IEEE Spectrum, 1968, 5, February, p. 101-108 with ill. 343. Evans J. D. Integrated MOST Circuits. Microelectronics and Reliability, 1968, 7, January, p. 11-36 with ill. 344. Wallmark J. Т., Marcus S. M. Integrated Devices Using Direct-Coupled Unipolar Transistor Logic. IRE Trans, on Electronic Computers, 1959, EC-8, June, p. 98-107. with ill. 345. Schmidt J. D. Integrated MOS-Transistor Random Access Memory. Solid-state Design, 1965, 6, January, p. 21-25 with ill. 346. Weinberger A. Large Sea e Integration of MOS Complex Logic: A Layout Method. IEEE Journal of Solid-State Circuits, 1967, SC-2; December, p. 182-190 with ill. 347. IGFET Circuit Perform.ance: n-channel vs p-channel. ISSCC, Digest of Technical Papers, 1969, p. 180-181. Auth.: G. Cheroff, D. L. Critchlow, R. H. Dennard, L. M. Terman. " 348. Wanlass F. M., Sah C. T. Nanowatt Logic using Field-Effect Metal - Oxide -Sem.iconductor Triodes. International Solid-State Circuit Conference (ISSCC), Digest of Technical Papers, 1963, p. 32-33. 349. Moore G. £., Sah C. Т., Wanlass F. M. Metal - Oxide - Semiconductor Field-Effect Devices for Micropower Circuitry, p. 41-55.-In: Micropower Electronics, E. Keonjian, Ed. New York, Macmillan, 1964, p. 392 with ill. 350. Ahrons R. W., Gardner R. D. The Interaction of Technology in 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 [ 97 ] 98 99 |