|
| |
|
Главная Журналы 208. Ham F. S., Mattis D. C. Electrical Properties of Thin Film. Semiconductors. IBM J. Res. Dev., 1960, 4, April, p. 143-151 with ill. 209. Greene R. F., Frankl D. R., Zemel J. Surface Transport in Semiconductors Phys. Rev., 1960, 118, May, p. 961-975 with ill. 210. Greene R. F. Nonlocal Transport and Cuspidal Surface Mobility in Sem.iconductors. Phys. Rev., 1963, 131, July, p. 592-593. 211. Greene R. F. Surface Transport. Surface Science, 1964, 2, January, p. 101-113 with ill. 212. Pierret R. F., Sah C. T. An MOS-Orientated Investigation of Effective Mobility Theory. Solid-State Electronics, 1968, 11, March, p. 279-290 with ill. 21-3. Surface Mobility Measurements in Germanium.. J. Phys. Chem. Solids, 1960, 14, July, p. 186-192 with ill. Auth.: A. Many, N. B. Grover, Y. Goldstein, E. Harnik. 214. Litovchenko V. G., Layashenko V. I., Frolov O. S. Investigation of the Electrical Properties of a Germ.anium. Surface, p. 103-114 with ill.- In: „Surface Properties of Semiconductors", ed. A. N. Frumkin. New York, Consultants Bureau, 1964. 215 Fang F., Triebwasser S. Carrier Surface Scattering in Silicon Inver-,sion Layers. IBM J. Res. Dev., 1964, 8, September, p. 410-415 with ill. 216. Leistiko O., Grove A. S., Sah C. T. Electron and Hole Mobilities in Inversion Layers on Thermally Oxidized Silicon Surfaces. IEEE Trans. Electron Devices, 1965, ED-12, May, p. 248-254 vnth ill. 217. Reddi V. G. K. Majority Carrier Surface Mobilities in Thermally Oxidized Silicon. IEEE Trans. Electron Devices, 1968, ED-15, March, p. 151- 160 with ill. 218. Sah C. Т., Pao H. C. The Effects of Fixed Bulk-charge on the Characteristics of Metal - Oxide - Semiconductor Transistors. IEEE Trans. Electron Devices, 1966, ED-13, April, p. 393-409 with ill. 219. Frankl D. R. Conditions for Quasi-Equilibrium in Semiconductor Space-Charge Layer. Surface Science, 1965, 3, April, p. 101-108 with ill. 220. Cobbold R. S. C. MOS-Transistor as a Four-Terminal Device. Electronics Letters, 1966, 2, June, p. 189-190 with ill. 221. Nielen, Van J. A., Memelink O. W. The Influence of the Substrate upon the D. C. Characteristics of Silicon MOS-Transistors. Philips Res. Repts., 1967, 22, February, p. 55-71 with ill. 222.* Crawford R. H.-MOS FET in Circuit Design. New York, McGraw-Hill, 1967. 182 p. with ill. 223. Das M. B. Dependence of the Characteristics of MOS-Transistors on the Substrate Resistivity. Solid-State Electronics, 1968, 11, March, p. 305- 322 with ill. 224. Kamins T. I., IWulIer R. S. Statistical Considerations in MOS FET Calculations. Solid-State Electronics, 1969, 12, May, p. 305-336 with ill. 225. Neumark G. F. Theory of the Influence of Hot Electron Effects on Insulated-Gate Field-Effect Transistors. Solid-State Electronics, 1967, 10, March, p.. 169-175 with ill. 226. Das M. B. Physical Limitations of MOS-Structures. Solid-State Electronics, 1969, 12, May, p. 305-336 with ill. 227. Pao H. C, Sah C. T. Effects of Diffusion Currents on Characteristics of Metal - Oxide (Insulator)-Semiconductor Transistors. Solid-State Electronics, 1966, 9, October, p. 927-937 with ill. 228. Brotherton S. D. Dependence of MOS-Transistor Threshold Voltage on Substrate Resistivity. Solid-State Electronics, 1967, 10, May, p. 611-616 with ill. 229. Richman P. Theoretical Threshold Voltages for MOS-Field-Effect Transistors. Solid-State Electronics, 1968, 11, Septem.berg, p. 869-876 with ill. 230. Frohman-Bentchkowsky D. On the Effect of Mobility Variation on MOS-Device Characteristics. Proc. IEEE, 1968, 56, February, p. 217-218. 231. Lunsmann P. D. Equivalent Circuit for the Conductance of an MOS FET. Electronics Letters, 1968, 4, March, p. 100-101 with ill. 232. Goldberg C. Pinch-Off in Insulated-Gate Field-Effect Transistors. Proc. IEEE, 1964, 52; April, p. 414-415. 233. Hofstein S. R., Warfield G. Carrier Mobility and Current Saturation in the MOS-Transistor. IEEE Trans. Electron Devices, 1965, ED-12, March, p. 129-138 with ill. . 234. Reddi V. K- G., Sah C. T. Source to Drain Resistance Beyond Pinch-Off in Metal - Oxide - Semiconductor Transistors (MOST). IEEE Trans. Electron Devices, 1965, ED-12, March, p. 139-141 with ill. 235. Frohman-Bentchkowsky D., Grove A. S. Conductance of MOS Transistors in Saturation. IEEE Trans. Electron Devices, 1969, ED-16, January, p. 108-113 with ill. 236. Heiman F. P., Miller H. S. Temperature Dependence of n-Type MOS Transistors. IEEE Trans. Electron Devices, 1965, ED-12, March, p. 142-148 with ill. 237. Cobbold R. S. C. Tem.perature Effects, in. MOS-Transistors. Electronics Letters, 1966 2, June, p. 190-191 with ill. 238. Influence de la Temperature sur les Dispositifs Semiconducteurs du Type MOS. Electronics Letters, 1965, 1, September, p. 185-186. Auth.: G. Giralt, B. Andre J., Simonne, D. Esteve. 239. Vadasz L., Grove A. S. Temperature Dependence of MOS-Transistor Characteristics below Saturation. IEEE Trans. Electron Devices, 1966, ED-13, December, p. 863-866 with ill. 240. Graaff H. C. de, Nielen J. A. Tem.perature Influence of the Channel Conductance of MOS Transistors. Electronics Letters, 1967, 3, May, p. 195- Ш6 with ill. 241. Morin F. J., Malta J. P. Electrical Properties of Silicon Containing Arsenic and Boron. Phys. Rev., 1954, 96, October 1, p. 28-35 with ill. 242. Nathanson H. C, Jund C, Grosyalet J. Temperature Dependence of Apparent Threshold Voltage of Silicon MOS-Transistors at Cryogenic Temperatures. IEEE Trans. Electron Devices, 1968, ED-14, June, p. 362-368 - with ill. 243 .Hofstein S. R., Warfield G. The Insulated Gate Tunnel Junction Triode. IEEE Trans. Electron Devices, 1965, ED-12, February, p. 66-76 with ill. 244. Grove A. S., Leistiko O., Hooper W. W. Effect of Surface Fields on the Breakdown Voltage of Planar Silicon p - n-Junctions, IEEE Trans. Electron Devices, 1967, ED-14, March, p. 157162 with ill. 245. Klein N. The Mechanism of Self-Healing Electrical Breakdown in MOS-Structures. IEEE Trans. Electron Devices, 1966, ED-13, November, p. 788-805 with ill. 246. Iyer R. R. Protective Device for MOS-Integrated Circuits. Pros. IEEE, 1968, 56, July, p. 1223-1224 with ill. 247. Cobbold R. S. C. Unpublished work. 1967. 248. Lindholm F. A., Ba da R. J., Clements J. L. Characterization of the Four-Terminal MOS-Transistor for Digital and Linear Application. Digest of Technical Papers, International Electronics Conference, Toronto, 1967, p. 116- 117. 249. Geurst J. A. Calculation of High-Frequency Characteristics of Thin-Film. Transistors. Solid-State Electronics, 1965, 8, January, p. 88-90 with ill. 250. Geurst J. A., Nunnink H. J. C. A. Numerical data on the High-Frequency Characteristics of Thin-Film Transistors. Solid-State Electronics, 1965, 8, Septem.ber, 769-771 with ill. 251. Candler D. В., Jordan A. G. A Small-Signal, High-Frequency Analysis of the Insulated-Gate Field-Effect Transistor. International J. of Electronics, 1965, 19, August, p.181-196 with ill. 252. Paul R. Hochfrequenzverhalten von Feldeffeckttransistoren mit Iso-lierter Steuerclektrode. Archiv der Elektrischen Dbertragung, 1966, 20, June, p. 317-328 m.it ill. 253. Paul R. Die Ersatzschaltung von Feldeffeckttransistoren mit Isolier-ten Gate. Nactiriciitentectinik, 1966,- 16, July, p. 243-246 mit ill. 254. Paul R. Einfluss einer Nichtidealen Gateisolation auf die Vierpolpara-meter des Feldeffeckttransistoren. Nachrictitentectmik, 1966, 16, August, p. 218-285 mit ill. 255. Paul R. Frequenzabhangigkeit der Vierpoleigenshaften von MOS-Transistoren. Nachrichtentechnik, 1966, 16, November, p. 401-406 mit ill. 256. Treleaven D. H., Trofimenkoff P. N. MOS FET Equivalent Circuit at Pinch-Off. Proc. IEEE, 1966, 54, September, p. 1223-1224 with ill. 257. Das. M. B. Generalized High-Frequency Network Theory of Field-Effect Transistors. Proc. lEE, 1967, 114, January, p. 50-59 with ill. 258. Burns J. R. High-Frequency Characteristics of the Insulated-Gate Field-Effect Transistor. RCA Rev., 1967, 28, September, p. 385-418 with ill. 259. Fischer W. Equivalent Circuit and Gain of MOS Field-Effect Transistors. Solid-state Electronics, 1966, 9, January, p. 71-81 with ill. 260. Paul R. Experimentelles Hochfrequenzverhalten von MOS-Transisto-ren. Nachrichtentechnik, 1967, 17, July, p. 255-260 mit ill. 261. Graff H. C. de. High-Frequency Measurements of Thin-Film Transistors. Solid-state Electronics, 1967, 10, January, p. 51-56 with ill. 262. Johnson H. A High-Frequency Representation of the MOS-Transistor. Proc. IEEE, 1966, 54, December, p. 1970-1971 with ill. 263. Pierce J. R. Physical Sources of Noise. Pro6. IRE, 1956, 44, May, p. 601-603 with ill. 264. Bennet W. R. Electrical Noise. New York, McGraw-Hill, 1960. p. 230 with ill. 265. Sah C. T. Theory of Low-Frequency Generation Noise in Junction-Gate Field-Effect Transistors. Proc. IEEE, 1964, 52, July, p. 795-814 vjith ill. 266. Lauritzen P. O. Low-Frequency Generation Noise in Junction Field-Effect Transistors. Solid-State Electronics, 1965, 8, January, p. 41-58 with ill. 267. Hall R. N. Electron-Hole Recombination in Germ.anium. Phys. Rev., 1952, 87, July, p. 387. 268. Shockley W., Read W. T. Statistics of Recom.bination of Holes and Electrons. Phys. Rev., 1952, 87, Septem.ber, p. 835-842 with ill. 269. Jordan A. G., Jordan N. A. Theory of Noise in Metal - Oxide - Semiconductor Devices. IEEE Trans. Electron. Devices, 1965, ED-12, March, p. 148-156 with ill. 270. Sah C. Т., Hielscher F. H. Evidence of the Surface Origin of the 1/f Noise. Phys. Rev. Letters, 1966, 17, October, p. 956-958 with ill. 271. NicoUian E. H., IWelchior H. A Quantitative Theory of 1/f Noise Due to Interface States in Thermally Oxidized Silicon. Bell Syst. Tech. J., 1967, 46, Novem.ber, p. 2019-2033 with ill. 272. Fairfield J. M., Gokhale B. V. Gold as a Recombination Centre in Silicon. Solid-state Electronics, 1965, 8, August, p, 685-691 with ill. 273. Van der Ziel A. Thermal Noise in Field-Effect Transistors. Proc. IRE, 1962, 50, August, p. 1808-1812 with ill. 274. Van der Ziel A. Gate Noise in Field-Effect Transistors at Moderately High-Frequencies. Proc. IEEE, 1963, 51, March, p. 461-467 with ill. 275. Bechtel G. N. A Curcuit and Noise Model of the Field-Effect Transistor. SEL Tectmical Report No. 1612-1, Stanford Electronics Laboratory, Stanford University, Califonia, April, 1963. 276. Klaassen F. M. High-Frequency Noise of the Junction Field-Effect Transistor. IEEE Trans. Electron Devices, 1967, ED-14, July, p. 368-373. 277. Trofimenkoff F. N. Thermal Noise in Field-Effect Transistors. Proc. IEEE, 1965, 53, Septem.ber, p. 1236-1237 with ill. 278. Bruncke W. C. Noise Measurem.ents in Field-Effect Transistors. Proc. IEEE, 1963, 51, February, p. 378-379 with ill. 279. Bruncke W. C, Vander Ziel A. Thermal Noise in Junction Gate Field-Effect Transistors. IEEE Trans. Electron Devices, 1966,- ED-13, March, p. 323-329 with ill. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 [ 96 ] 97 98 99 |