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Главная Журналы Donor Impurities during Tliermal Oxidation of Silicon. J. Appl. Phys., 1964 35, September, p. 2695-2701 with ill. 68. Reddi V. G. K. Tunable High Pass Filter Characteristics of a Special MOS-Transistor. IEEE Trans. Electron. Devices, 1965, ED-12, November, p 581-589 with ill. 69. Weimer P. K-, Shallcross F. V., Borkan H. Coplanar-Electrode Insulated-Gate Thin-Film Transistors. RCA Rev., 1963, 24, December, p. 661-675 with ill. 70. Weimer P. K. The TFT -A New Thin-Film Transistor. Proc. IRE, 1962, 50, June, p. 1462-1469 with ill. 71. A 180-Stage Integrated Thin-Film Scan Generator. Proc. IEEE, 1966, 54, iVlarch., p. 354-360 with ill. Auth: P. K. Weimer, G. Sadasiv, L. iVleray-Horvath, W. S. Нота. 72. Shallcross F. V. Evaluation of Cadmium Selenide Films for use in Thin-Film Transistors. RCA Rev., 1963, 24, December, p. 676-687 with ill. 73. Guttierrez W. A., Wilson H. L. The Effects of Rectifying Contacts on the Characteristics of the TFT. Proc. IEEE, 1964, 52, iVlay, p. 607 with ill. .74. Weimer P. K. A P-type Tellurium Thin-Film Transistor. Proc. IEEE, 1964, 52, iVlay, p. 608-609 with ill. 75. Wilson H. L., Guttierrez W. A. Tellurium TFTs Exceed 100 MHz and One Watt Cap-abilities. Proc. IEEE, 1967, 55; March,- p.. 415-416- with ill. 76. Reinhartz K. K., Russel V. A. Failure Mechanisms in Thin-Film Field-Effect Transistors. Solid-state Electronics, 1966, 9, October, p. 911-919 with ill. . 77. Koelmans H., de Graaff H. C. Drift Phenomena in CdSe Thin-Film FETs. Solid-state Electronics, 1967, 10, October, p. 997-1005 with ill. 78. Thompson C. The Effects of Ambient on Performance of CdS Thin-Film Transistor. Japan J. Appl. Phys., 1965, 4, March, p. 207-211 with ill. 79. Gutierrez W. A., Wilson H. L. Shelf and Operating Life Studies on SiO Protected CdSe Thin-Film Transistor. Proc. IEEE, 1965, 53, January, p. 92-93 with ill. 80. Gutierrez W. A., Wilson H. L. Cadmium Selenide Thin-Film Field-Effect Transistors. J. 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ZnTe and InSb Thin-Film Transistors. Electronics Letters, 1967, 3, June, p. 268-269 with ill. 89. Skalski J. F. A PbTe Single Crystal Thin-Film Transistor. Proc. , IEEE, 1965, 53, November, p. 1792 with ill. . 90. Pennebaker W. B. PbS Thin-Film Transistors. Solid-State Electronics, 1965, 8. May, p. 509-515 with ill. 91. Klasens H. A., Koelmans H. A Tin Oxide Field-Effect Transistor. Solid-State Electronics, 1964, 7, September, p. 701-702 with ill. 92. Heyman P. M., Heilmeier G. H. A Ferroelectric Field-Effect Device. Proc. IEEE, 1966, 54, June, p. 842-848 with ill. ,10 P. Кобболд 289 93. Мс Cusker J. Н., Perlman S. S. Improved Ferroelectric Field-Effect Devices. IEEE Trans. Electron Devices, 1968, ED-15, March, p. 182-183 with ill. 94. Moll J. L. „Physics of Semiconductors". New York. McGraw-Hill, 1964. 420 p. with ill. 95. Kroemer H. The Apparent Contact Potential of a Pseudo-Abrupt p-n-Junction. RCA Rev., 1955, 17, December, p. 515-521 with ill. 96. Hauser J. R. Characteristics of Junction Field-Effect Devices with Small Channel Length-to-Width Ratios. Solid-State Electronics, 1967, 10, June, p. 577-587 with ill. 97. Gobbold R. S. C, Trofimenkoff F. N. Four-Terminal Field-Effect Transistors. IEEE Trans. Electron Devices, 1965, ED-12, May, p. 246-247 with ill. 98. Bockemuehl R. R. Analysis of Field-Effect Transistors with Arbitrary charge Distribution. IEEE Trans. Electron Devices, 1963, ED-10, January, p. 31-34 with ill. 99. Latham D. C, Lindholm F. A., Hamilton D. J. Low-Frequency Operation of Four-Terminal Field-Effect Transistors. IEEE Trans. Electron Devices, 1964, ED-11, June, p. 300-305 with ill. 100. Latham D. C, Hamilton D. J., Lindholm P. A. New Modes of Operation for Field-Effect Devices. Proc. IEEE, 1963, 51, January, p. 226 with ill. 101. Cobbold R. S. C. Theory of Four-Terminal Double-Diffused Field-Effect Transistors. IEEE Trans. Electron Devices, 1965, ED-12, June, p. 302- 307 With ill. 102. Richer L Basic Limits on the Properties of Field-Effect Transistors. Solid-state Electronics, 1963, 6, September/October, p. 539-542 with ill. 103. Prior A. C. The Field-Dependence of Carrier Mobility in Silicon and Germanium. J. Phys. Chem. Solids, 1960, 12, January, p. 175-180 with ill. 104. Gibbons J. F. Papers on Carrier Drift Velocities in Silicon at High-Electric Field Strengths. IEEE Trans. Electron Devices, 1967, ED-14, January, p. 37 with-ill. 105. Norris C. В., Gibbons J. P. Measurement of High-Field Carrier Drift Velocities in Silicon by Time-of-Flight Technique. IEEE Trans. Electron Devices, 1967, ED-14, January, p. 38-43 with ill. 106. Rodriquez V., Ruegg H., Nicolet M. A. Measurement of the Drift Velocity of Holes in Silicon at High-Field Strengths. IEEE Trans. Electron Devices, 1967, ED-14, January, p. 44-46 with ill. 107. Duh C. Y., Moll J. L. Electron Drift Velocity in Avalanching Silicon Diodes. IEEE Trans. Electron Devices, 1967, ED-14, January, p. 46-49. 108. Trofimenkoff F. N. Field-Dependent Mobility Ana ysis of the Field-Effect Transistor. Proc. IEEE, 1965, 53, Noventber, p. 1765-1766 with ill. 109. Caughey D. M., Thomas R. E. Carrier Mobilities in Silicon Empirically Related to Doping and Field. Proc. IEEE, 1967, 55, December, p. 2192- 2193 with ill. 110. David P., Pautrat J. L. Effect de la Dependence Mobilite-Champ Electrique sur les characteristiques du Transistor a Effect de Champ a Jonctions. Solid-state Electronics, 1968, 11, September, p. 893-901 with ill. 111. Middlebrook R. D., Richer L Limits on the Power-Law Exponent for Field-Effect Transistor Transfer Characteristics. Solid-State Electronics, 1963, 6, September, p. 542-544 with ill. 112. Cobbold R. S. C, Trofimenkoff F. N. Theory and Application of the Field-Effect Transistor, p. 1. Theory and D. C. Characteristics. Proc. IEEE, 1964, 111, December, p. 1981-1992 with ill. 113 Richer L, Middlebrook R. D. Power-Law Nature of Field-Effect Transistor Experimental Characteristics. Proc. IEEE, 1963, 51, August, p. 1145- 1146 with ill. 114. Wedlock B. D. Direct Determination of the Pinch-off Voltage of a Depletion-Mode Field-Effect Transistor. Proc. IEEE, 1969, 57, January, p. 75-77 with ill. 115. Wu S. Y., Sah C. T. Current Saturation and Drain Conductance of Junction-Gate Field-Effect Transistors. Solid-State Electronics, 1967, 10, June, p 593-609 with ill. 116. Trofimenkoff F. N., Nordquist A. FET Operation in the Pinch-off Mode. Proc. IEEE, 1968, 115, April, p. 496-502 with ill. 117. Orebene A. В., Ghandhi S. K- The Behavior of Junction-Gate Field-Effect Transistors Beyond Pinch-off Proc. IEEE, 1969, 58, p. 230 with ill. 118. Prim R. C, Shockley W. Joining Solutions at the Pinch-off Point in Field-Effect Transistors. IRE Trans. Electron Devices, 1953, ED-4, December, p. 1-14 with ill. 119. Sah C. Т., Noyce R. N., Shockley W. Carrier Generation and Recombination in p-n-Junction and p-n-Junction Characteristics. Proc. IRE, 1957, 45, September, p. 1228-1243 with ill. 120. Sah C. T. Effect of Surface Recombination and Channel on p-n-June-tion and Transistor Characteristics. IRE Trans. Electron Devices, 1962, ED-9, January, p. 94-108 with ill. 121. Hoerni J. A., Weir B. Conditions for a Temperature Compensated Silicon Field-Effect Transistor. Proc. IEEE, 1963, 51, July, p. 1058-1059. 122. Evans L. £., Biasing FETs for Zero D. C. Drift. Electro-Technology, 1964, 74, August, p. 93-96 with ill. , 123.* Sevin L. J. Field-Effect Transistors. New York, McGraw-Hill, 1965. 160 "p. with ill 124. Beaufoy R., Sparkes J. J. The Junction Transistor as a Charge Controlled Device. ATE J., 1957, 13, October, p. 310-327 with ill. 125. Johnson E. 0., Rose A. A Simple General Analysis of Amplifier Devices with Emitter, Control and Collector Functions. Proc. IRE, 1959, 47, March, p. 407-418 with ill. 126. Middlebrook R. D. A Modern Approach to Semiconductor and Vacuum Device Theory. Proc. lEE, 1959, 106, May, p. 887-902 with ill. 127. Hamilton D. J., Lindholm F. A., Narud J. A. Comparison of Large Signal Models for Junction Transistors. Proc. IEEE, 1964, 52, March, p. 239- 248 with ill. 128. Sparkes J. J. Device Modeling. IEEE Trans. Electron Devices, 1967, ED-14, May, p. 229-232 with ill. 129. Middlebrook R. D. A Simple Derivation of Field-Effect Transistor Characteristics. Proc. IEEE, 1963, 51, August, p. 1146-1147 with ill. 130. Das M. B. Charge-Control Analysis of MOS and Junction-Gate Field-Effect Transistors. Proc. lEE, 1966, 1.13, October, p. 1565-1570 with ill. 131. Cobbold R. S. C. High-Frequency Properties of Four-Terminal Field-Effect Transistors. Proc. lEE, 1966, 113, January, p. 73-82 with ill. 132. Lindholm F. A., Gray P. R. Large-Signal and Small-Signal Models for Arbitrarily Doped Four-Terminal Field-Effect Transistors. IEEE Trans. Electron Devices, 1966, ED-13, December, p. 819-829 with ill. 133. Cobbold R. S. C. Equivalent Circuit and Integrate Capacitance of Four-Terminal Field-Effect Transistors. Electronics Letters, 1965, 1, April, p. 30-31 with ill. 134. Lindholm F. A., Gray P. R. Simple Derivation of Sm.all-Signal Equivalent Circuit for Arbitrarily Doped Four-Terminal Field-Effect Transistors. Electronics Letters, 1965, 1, November, p. 254-255 with ill. 135. Van der Ziel A. Gate Noise in Field-Effect Transistors at Moderately High-Frequencies. Proc. IEEE, 1963, 51, March, p. 461-467 with ill. 136. Richer 1. Input Capacitance of Field-Effect Transistors. Proc. IEEE, 1963, 51, Septem.ber, p. 1249-1250 with ill. 137. Rosenbaum S. D. Criterion for Punch Through on Double-Junction Semiconductor Structures. Proc. IEEE, 1965, 53, Janiiary, p. 99-100 with ill. 138. Trofimenkoff F. N., Nordquist A. FET Operation in the Pinchoff Mode. Proc. IEEE, 1968, 115, April, p. 496-502 with ill. 139. Van der Ziel A., Его J. W. Small-Signal, High-Frequency Theory of Field-Effect Transistors. IEEE Trans. Electron Devices, 1964, ED-11, April, p. 128-135 with ill. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 [ 94 ] 95 96 97 98 99 |